Technology computer aided design : simulation for VLSI MOSFET /

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and co...

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Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Sarkar, Chandan Kumar (Editor)
Format: eBook
Language:English
Language Notes:English.
Published: Boca Raton : CRC Press, ©2013.
Subjects:
Online Access:Connect to the full text of this electronic book
Connect to the full text of this electronic book
Description
Summary:"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--
Physical Description:1 online resource (xv, 409 pages, 15 unnumbered pages of plates) : illustrations (some color)
Bibliography:Includes bibliographical references and index.
ISBN:9781466512665
1466512660
9781315216454
1315216450