http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Saturation of Free Carrier Concentration in SemiconductorsThe Amphoteric Defect ModelMaximum Doping Limits in GaAsOther Group III-V SemiconductorsGroup III-NitridesGroup II-VI SemiconductorsGroup I-III-VI2 TernariesOther SemiconductorsUnintentional DopingAmphoteric DopantsPoint Defect Formation Near SurfacesPoint Defect Equilibria near the Semiconductor SurfacesPoint Defect Formation Kinetics in the Sub-Surface Layer - Bottleneck EffectBottleneck Related PhenomenaOptical Characterization of Plasma Etching Induced DamageIon-assisted Etching: Understanding the ProblemOptical Damage Assessment Techniques: Choosing a MethodThe Range of Ion-Induced DamageDry Etch Damage in Widegap Semiconductor MaterialsDamage in the InGaA1N SystemDamage in SiCDamage in II-VI CompoundsGeneration, Removal, and Passivation of Plasma Process Induced Defects Dry Etching SystemsPlasma Process Indu
edited by Kazumi Wada and Stella W. Pang.
Optoelectronic properties of semiconductors and superlattices ; v. 11