rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Strain-engineered MOSFETs
  title info:
    title: Strain-engineered metal-oxide-semiconductor field-effect transistors
  name:
    name part: Maiti, C. K.
    role:
      role term: creator
  name:
    name part: Maiti, T. K.
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: flu
    place:
      place term: Boca Raton, FL
    publisher: CRC Press
    date issued: ©2013
    date issued: 2013
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xix, 288 pages) : illustrations
  abstract: "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--
  table of contents: 1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions.
  note: C.K. Maiti, T.K. Maiti.
  note: Includes bibliographical references.
  subject:
    topic: Metal oxide semiconductor field-effect transistors
    topic: Reliability
  subject:
    topic: Integrated circuits
    topic: Fault tolerance
  subject:
    topic: Strains and stresses
  subject:
    topic: Transistors MOSFET
    topic: Fiabilité
  subject:
    topic: Circuits intégrés
    topic: Tolérance aux fautes
  subject:
    topic: Contraintes (Mécanique)
  subject:
    topic: strain
  subject:
    topic: stress
  subject:
    topic: Integrated circuits
    topic: Fault tolerance
  subject:
    topic: Strains and stresses
  classification: TK7871.99.M44 M248 2012
  classification: 621.3815284 M232
  related item:
    title info:
      title: Strain-engineered MOSFETs
    name:
      name part: Maiti, C.K.
    origin info:
      publisher: Boca Raton : Taylor & Francis, ©2013
    identifier: (DLC) 2012031209
    identifier: (OCoLC)809563361
  identifier: 1466500557
  identifier: 9781466500556
  identifier: 9781466503472
  identifier: 1466503475
  identifier: 1138075604
  identifier: 9781138075603
  identifier: CL0500000329 Safari Books Online
  identifier: http://proxy.library.tamu.edu/login
  identifier: https://www.taylorfrancis.com/books/9781315216577
  identifier: https://go.oreilly.com/TAMU/library/view/-/9781466503472/
  record info:
    record content source: UMI
    record creation date: 131105
    record change date: 20241108165758.9
    record identifier: in00005522441
    language of cataloging:
      language term: eng