Capacitance Spectroscopy of Semiconductors /
"Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by wor...
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| Other Authors: | , |
| Format: | eBook |
| Language: | English |
| Published: |
Boca Raton, FL :
CRC Press,
2018.
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| Edition: | First edition. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- Cover; Half Title; Title Page; Copyright Page; Table of Contents; Preface; SECTION I: PHYSICS; 1: An Introduction to Capacitance Spectroscopy in Semiconductors; 1.1 Capacitance; 1.1.1 The Definitions of Capacitance; 1.1.2 Extraction of Capacitance from Equivalent Circuits; 1.2 Capacitances in Semiconductors; 1.2.1 Capacitance of an Insulator; 1.2.2 Capacitance of a Semiconductor at Equilibrium; 1.2.3 Capacitance of a Semiconductor Depleted of Carriers; 1.2.4 Capacitance of a Semiconductor with Excess Carriers; 1.2.5 Capacitance of a Semiconductor with Carrier Traps
- 1.3 Capacitance Spectroscopy1.3.1 Capacitance-Voltage Profiling; 1.3.2 Drive-Level Capacitance Profiling; 1.3.3 Admittance Spectroscopy; 1.3.4 Deep-Level Transient Spectroscopy; 1.4 Impedance Spectroscopy; 1.4.1 Experiment; 1.4.2 Graphical Analysis; 1.5 Summary; 2: Admittance Spectroscopy; 2.1 Principles of Admittance Spectroscopy; 2.2 Interpretation of Admittance Spectroscopy; 2.2.1 Series Resistance; 2.2.2 Defect Spectroscopy; 2.2.3 Carrier Freeze-Out; 2.2.4 Back Contact Diode; 2.2.5 Simulation; 2.3 Series Resistance; 2.4 Dielectric Relaxation; 2.5 Defect Spectroscopy
- 2.6 Back Contact Diode2.7 Phototransistor Model; 2.8 Discussion; 2.9 Conclusion; 3: Deep-Level Transient Spectroscopy; 3.1 Introduction; 3.2 The Principle; 3.2.1 Fourier-Transform Analysis; 3.2.2 Laplace DLTS; 3.2.3 Coupling of Defect Levels; 3.3 Carrier Capture Cross Section; 3.4 Minority Carrier Traps; 3.5 Extended Defects; 3.6 Heavily Compensated Semiconductors and Non-Uniform Doping Profile; 3.7 Anomalous Signals; 3.8 Summary; 4: Capacitance-Voltage and Drive-Level-Capacitance Profiling; 4.1 Depletion Capacitance and CV Profiling; 4.1.1 The Ideal One-Sided Diode with an Abrupt Junction
- 4.1.2 Influence of Series Resistance4.1.3 Influence of Interface States; 4.1.4 Capacitance in Forward Bias; 4.1.5 Metal-Insulator-Semiconductor Devices; 4.1.6 Experimental Details of CV; 4.2 Drive-Level Capacitance Profiling; 4.2.1 Theoretical Development of DLCP; 4.2.2 Experimental Details of DLCP; 4.2.3 Analyzing DLCP Data; 4.2.4 History of DLCP; 4.3 Comparing Results from Multiple Techniques; 4.3.1 Comparisons between DLCP and CV; 4.3.2 Comparisons with AS; 4.3.3 Other Quantitative Tests of DLCP; 4.4 Cautions and Opportunities for CV and DLCP; SECTION II: INSTRUMENTATION
- 5: Basic Techniques for Capacitance and Impedance Measurements5.1 Definitions; 5.2 Classification of Measurement Techniques; 5.3 Voltage Sensing; 5.3.1 Shunt Scheme; 5.3.2 Ratiometric Configuration; 5.3.3 Half Bridge; 5.3.4 Full Bridge; 5.4 Current Sensing; 5.4.1 Transimpedance Front-End; 5.4.2 Summary and Comparison; 5.5 Impedance Calculation; 5.5.1 Envelope Detector; 5.5.2 Synchronous Demodulation; 5.5.3 Sampling-Based Techniques; 5.6 Correction of Parasitics-Induced Inaccuracies; 5.6.1 Multi-Wire Schemes; 5.6.2 Calibration; 5.7 Other Techniques; 5.7.1 Resonant Techniques