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This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory and scaling issues and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs and non-classical MOSFET concepts, which receive li...

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Bibliographic Details
Main Author: Schwierz, Frank
Corporate Author: Taylor & Francis
Other Authors: Wong, Hei, Liou, Juin J.
Format: eBook
Language:English
Published: Singapore : Pan Stanford Pub., ©2010.
Subjects:
Metal oxide semiconductors.
Metal oxide semiconductor field-effect transistors.
Nanotechnology.
MOS (Électronique)
Transistors MOSFET.
Nanotechnologie.
COMPUTERS > Machine Theory.
COMPUTERS > Computer Engineering.
COMPUTERS > Hardware > General.
Metal oxide semiconductor field-effect transistors
Metal oxide semiconductors
Nanotechnology
Electronic books.
Online Access:Connect to the full text of this electronic book
Description
Summary:This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory and scaling issues and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs and non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits and drawbacks of MOSFET concepts, such as strained Si MOSFETs, ultra-thin-body SOI MOSFETs and multiple-gate MOSFETs (FinFETs, tri-gate MOSFETs) are presented.
Physical Description:1 online resource (ix, 340 pages) : illustrations
Bibliography:Includes bibliographical references and index.
ISBN:9789814241229
9814241229
9814241083
9789814241083