http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
1 online resource (xviii, 391 pages) : illustrations
"This comprehensive reference text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. The text covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail. It covers important topics including negative capacitance devices, surface-plasmon resonance devices, fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques"--
Fundamental phenomena in nano scale semiconductor devices / Zeinab Ramezani and Arash Ahmadivand -- Recent advancements in growth and stability of phosphorene-prospects for high performance devices / Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, Amitesh Kumar -- Study of transition metal dichalcogenides in junctionless transistors and effect of variation in dielectric oxide / Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta -- GNRFET based ternary repeaters : prospects and potential implementation for efficient GNR interconnects / Afreen Khursheed and Kavita Khare -- An effective study on particulate matter (PM) removal using graphene filter / Katyayani Bhardwaj, Aryan and Ravindra Kumar Yadav -- Recent trends in fabrication of graphene-based devices for detection of heavy metal ions in water / Avik Sett, Monojit Mondal, Santanab Majumder, Tarun Kanti Bhattacharyya -- Vertical tunnel FET having dual MOSCAP geometry / Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam -- Leakage current and capacitance reduction in CMOS technology / Ajay Somkuwar, Laxmi Singh -- Design of SiGe sourced gate-all-around TFET with gate-on-source for enhanced analog performance / Navaneet Kumar Singh, Rajib Kar and Durbadal Mandal -- Solving Schrodinger's equation for low dimensional nanostructures for understanding quantum confinement effects / Amit Kumar -- Simulation of reconfigurable FET circuits using Sentaurus TCAD tool / Remya Jayachandran, Rama S Komaragiri, K J Dhanaraj -- NEGF method for design and simulation analysis of nano-scale MOS devices / Chhaya Verma & Jeetendra Singh -- Performance investigation of a novel Si/Ge heterojunction asymmetric doublegate doping less tunnel field effect transistor for low-power analog/RF and IoT applications / Suruchi Sharma, Rikmantra Basu, Baljit Kaur -- Synthesis of graphene nanocomposites toward the enhancement of energy storage performance for supercapacitors / Monojit Mondal, Avik Sett, Dipak Kumar Goswami, Tarun Kanti Bhattacharyya -- Design and analysis of dopingless charge plasma based ring architecture of tunnel field effect transistor for low power application / Ashok Kumar Gupta, Ashish Raman, Prateek Kumar, Naveen Kumar, Deep Shekhar -- Hybrid intelligent technique based doping profile optimization in a double gate heterdielectric TFET / Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, Koushik Guha -- Graphene nanoribbon devices : advances in fabrication and applications / Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, Andres Jaramillo-Botero -- Design and analysis of various neural preamplifier circuits / Swagata Devi, Koushik Guha, Krishna Lal Baishnab -- Design and analysis of transition metal dichalcogenides based feedback transistor / Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, Naveen Kumar -- Reduced graphene-metal phthalocyanine based nanohybrids for gas sensing applications / Aman Mahajan, Manreet Kaur Sohal -- Phosphorene multigate field-effect transistors for high-frequency applications / R. Ramesh, Adhithan Pon, Arkaprava Bhattacharyya -- Analytical modeling of reconfigurable transistors / Ranjith R., Suja K. J., Rama S. Komaragiri -- Flexi-grid technology : a necessity for spectral resource utilization / Divya Sharma, Shivam Singh, Anurag Upadhyay, Sofyan A. Taya.
edited by Ashish Raman, Deep Shekhar, and Naveen Kumar.
Includes bibliographical references and index.
Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland.
TECHNOLOGY / Electronics / Microelectronics
Boca Raton : CRC Press, Taylor & Francis Group, 2022