Silicon based unified memory devices and technology /

"The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of...

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Bibliographic Details
Main Author: Bhattacharyya, Arup (Author)
Corporate Author: Taylor & Francis
Format: eBook
Language:English
Published: Boca Raton, FL : CRC Press, [2017]
Subjects:
Online Access:Connect to the full text of this electronic book
Description
Summary:"The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R & D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc."--Provided by publisher.
Item Description:4.2.1 Nitride Traps, Trap Creation: Process and Stress Sensitivity.
Physical Description:1 online resource (681 pages)
Bibliography:Includes bibliographical references and index.
ISBN:9781351798310
1351798316
9781315206868
1315206862
9781351798327
1351798324
9781351798303
1351798308