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Strained-Si heterostructure field effect devices
Strained silicon heterostructure field effect devices
1 online resource (423 pages) : illustrations.
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS. After an introduction to the material.
Cover; Title; Copyright; Dedication; Preface; Contents; Chapter 1: Introduction; Chapter 2: Strain Engineering in Microelectronics; Chapter 3: Strain-Engineered Substrates; Chapter 4: Electronic Properties of Engineered Substrates; Chapter 5: Gate Dielectrics on Engineered Substrates; Chapter 6: Heterostructure SiGe/SiGeC MOSFETs; Chapter 7: Strained-Si Heterostructure MOSFETs; Chapter 8: Modeling and Simulation of Hetero-FETs; Index
C.K. Maiti, S. Chattopadhyay, L.K. Bera.
Includes bibliographical references and index.
Metal oxide semiconductor field-effect transistors
Series in materials science and engineering