rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Silicon heterostructure devices
  name:
    name part: Cressler, John D.
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: flu
    place:
      place term: Boca Raton
    publisher: CRC Press
    date issued: ©2008
    date issued: 2008
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (1 volume (various pagings)) : illustrations
  abstract: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from t.
  table of contents: Chapter 1 The Big Picture -- chapter 2 A Brief History of the Field -- part 3 Overview: SiGe HBTs -- chapter 4 Device Physics -- chapter 5 Second-Order Effects -- chapter 6 Low-Frequency Noise -- chapter 7 Broadband Noise -- chapter 8 Microscopic Noise Simulation -- chapter 9 Linearity -- chapter 10 pnp SiGe HBTs -- chapter 11 Temperature Effects -- chapter 12 Radiation Effects -- chapter 13 Reliability Issues -- chapter 14 Self-Heating and Thermal Effects -- chapter 15 Device-Level Simulation -- chapter 16 SiGe HBT Performance Limits -- part 17 Overview: Heterostructure FETs -- chapter 18 Biaxial Strained Si CMOS -- chapter 19 Uniaxial Stressed Si MOSFET -- chapter 20 SiGe-Channel HFETs -- chapter 21 Industry Examples at the State-of-the-Art: Intel's 90nm Logic Technologies -- part 22 Overview: Other Heterstructure Devices -- chapter 23 Resonant Tunneling Devices -- chapter 24 IMPATT Diodes -- chapter 25 Engineered Substrates for Electronic and Optoelectronic Systems -- chapter 26 Self-Assembling Nanostructures in Ge(Si)-Si Heteropitaxy -- part 27 Overview: Optoelectronic Components -- chapter 28 Si-Si Ge LEDs -- chapter 29 Near-Infrared Detectors -- chapter 30 Si-Based Photonic Transistor Devices for Integrated Optoelectronics -- chapter 31 Si-SiGe Quantum Cascade Emitters.
  note: edited by John D. Cressler.
  note: Includes bibliographical references.
  note: English.
  subject:
    topic: Bipolar transistors
  subject:
    topic: Heterostructures
  subject:
    topic: Bipolar integrated circuits
    topic: Design and construction
  subject:
    topic: Transistors bipolaires
  subject:
    topic: Hétérostructures
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Electronics
    topic: Transistors
  subject:
    topic: Bipolar integrated circuits
    topic: Design and construction
  subject:
    topic: Bipolar transistors
  subject:
    topic: Heterostructures
  classification: TK7871.96.B55 S54 2008
  classification: 621.3815/28
  related item:
    title info:
      title: Silicon heterostructure devices
    origin info:
      publisher: Boca Raton : CRC Press, ©2008
    identifier: (DLC) 2007030748
    identifier: (OCoLC)159822425
  identifier: 1420066900
  identifier: 9781420066906
  identifier: 9781420066913
  identifier: 1420066919
  identifier: 9781315218885
  identifier: 1315218887
  identifier: 9781351826082
  identifier: 1351826085
  identifier: TANDF_189159 Ingram Content Group
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: HNK
    record creation date: 080423
    record change date: 20241108165433.6
    record identifier: in00005519003
    language of cataloging:
      language term: eng