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Silicon heterostructure devices /

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets mar...

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Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Cressler, John D.
Format: eBook
Language:English
Language Notes:English.
Published: Boca Raton : CRC Press, ©2008.
Subjects:
Bipolar transistors.
Heterostructures.
Bipolar integrated circuits > Design and construction.
Transistors bipolaires.
Hétérostructures.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Bipolar integrated circuits > Design and construction
Bipolar transistors
Heterostructures
Electronic books.
Online Access:Connect to the full text of this electronic book
Description
Summary:SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from t.
Physical Description:1 online resource (1 volume (various pagings)) : illustrations
Bibliography:Includes bibliographical references.
ISBN:1420066900
9781420066906
9781420066913
1420066919
9781315218885
1315218887
9781351826082
1351826085