Fabrication of SiGe HBT BiCMOS technology /

SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else's SiGe fab as foundry for their designers. Key to...

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Bibliographic Details
Corporate Author:	Taylor & Francis
Other Authors:	Cressler, John D.
Format:	eBook
Language:	English
Published:	Boca Raton, FL : CRC Press, ©2008.
Subjects:	Bipolar transistors > Design and construction. Metal oxide semiconductors, Complementary > Design and construction. TECHNOLOGY & ENGINEERING > Electronics > Transistors. Bipolar transistors > Design and construction Metal oxide semiconductors, Complementary > Design and construction Electronic books.
Online Access:	Connect to the full text of this electronic book

Description
Summary:	SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else's SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Draw.
Physical Description:	1 online resource (1 volume (various pagings)) : illustrations
Bibliography:	Includes bibliographical references.
ISBN:	1420066870 9781420066876 9781420066890 1420066897