Floating body cell : a novel capacitor-less DRAM cell /

DRAM together with NAND Flash is driving semiconductor technologies with wide spectrum of usage ranging from PC, mobile phone and digital home appliances to solid-state disk (SSD). However, the DRAM cell which consists of a data storage capacitor (1C) and a switching transistor (1T) is facing seriou...

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Bibliographic Details
Main Author:	Ohsawa, Takashi
Corporate Author:	Taylor & Francis
Other Authors:	Hamamoto, Takeshi
Format:	eBook
Language:	English
Published:	[Singapore] : Boca Raton, FL : Pan Stanford ; CRC Press, ©2012.
Subjects:	Metal oxide semiconductor field-effect transistors. Semiconductor storage devices. Transistors MOSFET. Ordinateurs > Mémoires à semi-conducteurs. COMPUTERS > Computer Engineering. COMPUTERS > Hardware > General. COMPUTERS > Machine Theory. Metal oxide semiconductor field-effect transistors Semiconductor storage devices Electronic books.
Online Access:	Connect to the full text of this electronic book

Description
Summary:	DRAM together with NAND Flash is driving semiconductor technologies with wide spectrum of usage ranging from PC, mobile phone and digital home appliances to solid-state disk (SSD). However, the DRAM cell which consists of a data storage capacitor (1C) and a switching transistor (1T) is facing serious difficulty in shrinking the size of the capacitor whose capacitance needs to be kept almost constant (20~30fF) throughout generations. The availability of a new DRAM cell which does not rely on an explicit capacitor for storing its data is more than ever awaited for further increasing the bit dens.
Physical Description:	1 online resource (ix, 248 pages) : illustrations
Bibliography:	Includes bibliographical references.
ISBN:	9789814303088 9814303089 9814303070 9789814303071