Description
| Abstract: | Neutron transmutation doped gallium arsenide samples were produced at the Nuclear Science Center at Texas A&M University. The samples were then annealed in an argon gas atmosphere for 20 minutes at temperatures between 100° and 600°C. The high initial resistivity never decreased. This indicates that 600°C is insufficient to anneal out the radiation damage from neutron transmutation doping in gallium arsenide. |
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| Item Description: | Undergraduate thesis written for Program year: 1977-1978 |
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| Physical Description: | 1 online resource (16 pages).
Digitized from print version held at Pickle Center High Density Storage, HDR barcode A14850693772 |
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