Description
| Abstract: | An anodic method of forming an insulator on Indium Phosphide for use in the fabrication of MOS devices is examined. Aluminumin oxide insulating layers are produced from the oxidation of deposited aluminum films in an aqueous solution. MOS capacitors are fabricated. Experimental procedure and methods of analysis are explained. Resulting Capacitance vs. Voltage data is given for typical capacitors, and compared to data obtained from MOS capacitors formed from the plasma enhanced chemical vapor deposition of silicon dioxide. Reasons for the generally poor quality insulators which result are discussed. |
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| Item Description: | Undergraduate thesis written for Program year: 1985/1986 |
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| Physical Description: | 1 online resource (26 pages).
Digitized from print version held at Pickle Center High Density Storage, barcode 24829637 |
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