rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Silicon technologies
    sub title: ion implantation and thermal treatment
  name:
    name part: Baudrant, Annie.
  type of resource: text
  genre: bibliography
  origin info:
    place:
      place term: enk
    place:
      place term: London
    place:
      place term: Hoboken, NJ
    publisher: ISTE
    publisher: Wiley
    date issued: 2011
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource : illustrations
  abstract: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
  table of contents: Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case
  table of contents: 1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL
  table of contents: 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory
  table of contents: 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources
  note: edited by Annie Baudrant.
  note: Title from PDF title page (viewed on Feb. 28, 2013).
  note: Includes bibliographical references and index.
  subject:
    topic: Semiconductor doping
  subject:
    topic: Ion implantation
  subject:
    topic: Semiconductors
    topic: Heat treatment
  classification: TK7871.85 .S55 2011
  classification: 621.3815/2
  related item:
    title info:
      title: Silicon technologies
    origin info:
      publisher: London : ISTE ; Hoboken, NJ : Wiley, 2011
    identifier: (DLC) 2011008131
  identifier: 9781118601044
  identifier: 1118601041
  identifier: 9781118601112
  identifier: 1118601114
  identifier: 9781118601143
  identifier: 1118601149
  identifier: 9781848212312
  identifier: 1848212313
  identifier: CL0500000292 Safari Books Online
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: NhCcYBP
    record creation date: 130228
    record change date: 20260214213750.4
    record identifier: in00004680601
    language of cataloging:
      language term: eng