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Frontiers in electronic materials : a collection of extended abstracts of the Nature conference Frontiers in electronic materials, June 17th to 20th 2012, Aachen, Germany /

This collection of extended abstracts summarizes the latest research as presented at ""Frontiers in Electronic Materials"", a Nature conference on correlation effects and memristive phenomena, which took place in 2012. The contributions from leading authors from the US, Japan, Ko...

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Bibliographic Details
Other Authors: Heber, Joerg
Format: eBook
Language:English
Published: Weinheum : Wiley-VCH, ©2012.
Series:Nature conferences.
Subjects:
Electronics > Materials > Congresses.
Molecular electronics > Congresses.
Nanotechnology > Congresses.
Electronic books.
Online Access:Connect to the full text of this electronic book
Table of Contents:
  • Blank Page; Title Page; Content; Invited Talks; INV 1: NEW MAGNETIC MATERIALS BASED ON DEFECTS, INTERFACES AND DOPING; INV 2: ATOMIC-RESOLUTION ELECTRON SPECTROSCOPY OF INTERFACES AND DEFECTS IN COMPLEX OXIDES; INV 3: SIGNIFICANCE OF SOLID STATE IONICS FOR TRANSPORT AND STORAGE; INV 4: ELECTROCHEMICAL DOPING OF OXIDE HETEROSTRUCTURES; INV 5: SWITCHABLE PHOTODIODE EFFECT IN FERROELECTRIC BiFeO3; INV 6: EXPLORATION OF ELECTRON SYSTEMS AT OXIDE INTERFACES; INV 7: THE INFLUENCE OF IMPERFECTIONS ON THE 2DEG TRANSPORT PROPERTIES IN THE LaAlO3-SrTiO3 SYSTEM.
  • INV 8: CORRELATED ELECTRONIC MATERIALS: COMPUTATIONAL STUDIES OF MULTIORBITAL MODELS FOR BULK COMPOUNDS AND INTERFACES OF MAGNETIC AND SUPERCONDUCTINGMATERIALSINV 9: ELECTROLYTE GATE INDUCED METALLIZATION OF SEVERAL FACETS (101, 001, 110 and 100) OF RUTILE TiO2 AND (001) SrTiO3; INV 10: COMPLEX THERMOELECTRIC MATERIALS; INV 11: PCRAM OPERATION AT DRAM SPEEDS: EXPERIMENTAL DEMONSTRATION AND COMPUTER-SIMULATIONAL UNDERSTANDING; INV 12: ELECTRONIC PHASE CHANGE AND ENTROPIC FUNCTIONS IN TRANSITION METAL OXIDES; INV 13: DISORDER INDUCED METAL-INSULATOR TRANSITION IN PHASE CHANGE MATERIALS.
  • INV 14: ELECTRONIC PROPERTIES OF THE INTERFACIAL LaAlO3 / SrTiO3 SYSTEMINV 15: EMERGENT PHENOMENA IN TWO-DIMENSIONAL ELECTRON GASES AT OXIDE INTERFACES; INV 16: GIANT TUNNEL ELECTRORESISTANCE IN FERROELECTRIC TUNNEL JUNCTIONS; INV 17: REVISITING THE HEXAGONAL MANGANITES; INV 18: STUDY OF MAGNETOELECTRIC EFFECTS DUE TO MULTI-SPIN VARIABLES; INV 19: BI-LAYERED RERAM: MULTI-LEVEL SWITCHING, RELIABILITY AND ITS MECHANISM FOR STORAGE CLASS MEMORY AND RECONFIGURATION LOGIC.; INV 20: SELF-ORGANIZATION IN ADAPTIVE, RECURRENT, AUTONOMOUS MEMRISTIVE CROSSNETS.
  • INV 21: ELECTRIC FIELD CONTROL OF MAGNETIZATIONINV 22: MAGNETIC SWITCHING OF FERROELECTRIC DOMAINS AT ROOM TEMPERATURE IN A NEW MULTIFERROIC; INV 23: CONTROL OF CORRELATED ELECTRONS IN METAL-OXIDE SUPERLATTICES; INV 24: METAL-INSULATOR TRANSITIONS OF CORRELATED ELECTRONS IN OXIDE HETEROSTRUCTURES; INV 25: THEORETICAL DESIGN OF TOPOLOGICAL PHENOMENA; INV 26: MAGNETIC RECONSTRUCTIONS IN PEROVSKITE HETEROINTERFACES AND ULTRATHIN FILMS; INV 27: PROGRESS IN THE ATOMIC SWITCH; Nanosessions; Nanosession: 2D electron systems
  • Atomic configurations.
  • 2DA 1: HIGHLY CONFINED SPIN-POLARIZED TWO-DIMENSIONAL ELECTRON GAS IN SrTiO3/SrRuO3 SUPERLATTICES2DA 2: FIRST-PRINCIPLES STUDY OF INTERMIXING AND POLARIZATION AT THE DyScO3/SrTiO3 INTERFACE; 2DA 3: ATOMIC-SCALE SPECTROSCOPY OF AN OXIDE INTERFACE BETWEEN A MOTT INSULATOR AND A BAND INSULATOR; 2DA 4: INTERFACE ATOMIC STRUCTURE IN LaSrAlO4/LaNiO3/LaAlO3 HETEROSTRUCTURES; 2DA 5: TAILORING THE ELECTRONIC PROPERTIES OF THE LAO/STO INTERFACE BY CONTROLLED CATION-STOICHIOMETRY VARIATION IN STO THIN FILMS.