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Silicon carbide and related materials 2017 : selected peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA /

This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their...

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Bibliographic Details
Corporate Authors: International Conference on Silicon Carbide and Related Materials Washington, D.C., Knovel (Firm)
Other Authors: Stahlbush, Robert (Editor)
Format: Conference Proceeding eBook
Language:English
Published: Zurich, Switzerland : Trans Tech Publications, Limited, 2018.
Series:Materials science forum ; v. 924.
Subjects:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Couches minces de carbure de silicium > Congrès.
Nitrures > Congrès.
Graphène > Congrès.
Cristaux > Croissance > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Congrès.
Semi-conducteurs à large bande interdite > Matériaux > Innovations > Congrès.
TECHNOLOGY & ENGINEERING > Engineering (General)
TECHNOLOGY & ENGINEERING > Reference.
Crystal growth.
Graphene.
Nitrides.
Silicon carbide.
Silicon carbide > Electric properties.
Silicon-carbide thin films.
Electronic books.
Conference papers and proceedings.
Online Access:Connect to the full text of this electronic book
Description
Summary:This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science.
Item Description:Chapter 2: Defects, Material Studies and Characterization.
Physical Description:1 online resource (1014 pages) : illustrations
Bibliography:Includes bibliographical references and index.
ISBN:9781523122844
1523122846
9783035731453
3035731454