Computational Fermi level engineering and doping-type conversion of Ga₂O₃ via three-step processing /

Gallium (III), Indium (III) and Iron (III) complexes of phenolic analogs of ethylenediaminetetraacetic acid.
by: Taliaferro, Christina Hasserodt
Published: (1984)

Growth and characterization of liquid phase epitaxial GaP layers /
by: Kao, Yung-Chung, 1956-
Published: (1982)

Rare-earth doped GaN : an innovative path toward area-scalable solid-state high energy lasers without thermal distortion (2nd year) /
by: Wraback, Michael
Published: (2010)

Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, California, U.S.A. /
Published: (2008)

Gallium nitride (GaN) I /
Published: (1997)

GaAs microelectronics /
Published: (1985)

Compound semiconductors 1999 : proceedings of the Twenty-sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999 /
Published: (2000)

2003 International Symposium on Compound Semiconductors : post-conference proceedings of the Thirtieth International Symposium on Compound Semiconductors : held in San Diego, California, 25-27 August, 2003 /
Published: (2004)

2003 International Symposium on Compound Semiconductors : 25-27 August, 2003, Holiday Inn on the Bay, San Diego, CA /
Published: (2003)

CIGS material and device stability : a processing perspective /
by: Ramanathan, Kannan
Published: (2012)

Compound semiconductors 2001 : proceedings of the Twenty-Eighth International Symposium on Compound Semiconductors held in Tokyo, Japan, 1-4 October 2001 /
Published: (2002)

2000 IEEE International Symposium on Compound Semiconductors : proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors : held in Monterey, California, 2-5 October, 2000 /
Published: (2000)

Thermal management of gallium nitride electronics
Published: (2022)

Growth and evaluation of AgGaS₂ and AgGaSe₂ for infrared nonlinear applications /
by: Byer, Robert L.
Published: (1986)

Properties of aluminium gallium arsenide /
Published: (1993)

Semiconducting and insulating materials ... : proceedings of the ... Conference on Semiconducting and Insulating Materials (SIMC'...).
Published: (1996)

Gallium nitride (GaN) : physics, devices, and technology /
Published: (2015)

Fabrication of GaAs devices /
by: Baca, A. G.
Published: (2005)

GaAs devices and circuits /
by: Shur, Michael
Published: (1987)

GaN transistors for efficient power conversion /
by: Lidow, Alex
Published: (2014)

Modern GaAs processing methods /
by: Williams, Ralph
Published: (1990)

Electrothermal modeling and analysis of gallium oxide power switching devices : preprint /
by: Kotecha, Ramchandra M.
Published: (2019)

GaAs technology and its impact on circuits and systems /

Compound semiconductors 1995 : proceedings of the Twenty-Second International Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 Aug. to 2 Sept. 1995 /
Published: (1996)

Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Displays /
Published: (2016)

Growth and evaluation of AgGaS₂ and AgGaSe₂ for infrared nonlinear applications /
by: Byer, R. L. (Robert L.), 1942-, et al.
Published: (1983)

Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP /
by: Adachi, Sadao, 1950-
Published: (1992)

Growth of low defect density gallium nitride (GaN) films on novel tantalum carbide (TaC) substrates for improved device performance /
by: Derenge, M. A.
Published: (2009)

GaN power devices for efficient power conversion /
by: Lidow, Alex
Published: (2025)

GaAs integrated circuits /
Published: (1988)

Roadmap for skutterudites and point defects in GaN /
Published: (2022)

Gallium arsenide and related compounds 1988 : proceedings of the fifteenth international symposium on Gallium Arsenide and related compounds held in Atlanta, Georgia, 11-14 September 1988 /
Published: (1989)

Gallium arsenide and related compounds 1985 : proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan on 23-26 September, 1985 /
Published: (1986)

Performance comparison of top and bottom contact gallium arsenide (GaAs) solar cell /
by: Das, Naresh C.
Published: (2014)

GaInAsP alloy semiconductors /
Published: (1982)

GaAs FET principles and technology /
Published: (1982)