Fundamentals of modern VLSI devices /
A thoroughly updated third edition of a classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as...
| Main Authors: | , |
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| Format: | Book |
| Language: | English |
| Published: |
Cambridge ; New York :
Cambridge University Press,
2022.
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| Edition: | Third edition. |
| Subjects: |
| Summary: | A thoroughly updated third edition of a classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, shortchannel FinFETS and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry. |
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| Physical Description: | xxvii, 597 pages : illustrations ; 26 cm. |
| Bibliography: | Includes bibliographical references (pages 565-586) and index. |
| ISBN: | 9781108480024 1108480020 |