Observation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide /
| Main Authors: | , |
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| Format: | Government Document eBook |
| Language: | English |
| Published: |
Adelphi, MD :
Army Research Laboratory,
[2007]
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| Series: | ARL-TR (Aberdeen Proving Ground, Md.) ;
4164. |
| Subjects: | |
| Online Access: | https://purl.fdlp.gov/GPO/gpo54037 |
| Item Description: | Title from title screen (viewed on Dec. 17, 2014). "June 2007." |
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| Physical Description: | 1 online resource (iv, 12 pages) : illustrations (some color). |
| Bibliography: | Includes bibliographical references (page 9). |