rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: III-nitride electronic devices
  name:
    name part: Chu, Rongming
    role:
      role term: editor.
  name:
    name part: Shinohara, Keisuke
    role:
      role term: editor.
  type of resource: text
  origin info:
    place:
      place term: mau
    date issued: 2019
    copyright date: 2019
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: print
    extent: xii, 528 pages : colour illustrations ; 24 cm.
  abstract: "III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more"--publisher's web page, viewed October 18, 2019.
  table of contents: Preface / Rongming Chu, Keisuke Shinohara -- Chapter One. Electronic properties of III-nitride materials and basics of III-nitride FETs / Peter M. Asbeck -- Chapter Two. Epitaxial growth of III-nitride electronic devices / Yu Cao -- Chapter Three. III-Nitride microwave power transistors / Jeong-Sun Moon -- Chapter Four. III-Nitride millimeter wave transistors / Keisuke Shinohara -- Chapter Five. III-Nitride lateral transistor power switch / Sang-Woo Han, Rongming Chu -- Chapter Six. III-Nitride vertical devices / Tohru Oka -- Chapter Seven. Physics-based III-Nitride device modeling / Ujwal Radhakrishna -- Chapter Eight. Power electronics applications of III-nitride transistors / Yifeng Wu -- Chapter Nine. N-polar III-nitride transistors / Man Hoi Wong, Umesh K. Mishra -- Chapter Ten. III-Nitride ultra-wide-bandgap electronic devices / Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein, Shahed Reza -- Chapter Eleven. III-Nitride p-channel transistors / Akira Nakajima -- Chapter Twelve. Emerging materials, processing and device concepts: epitaxial transition metal nitride electronic materials / David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey -- Chapter Thirteen. Epitaxial lift-off for III-nitride devices / Chris Youtsey, Robert McCarthy, Patrick Fay.
  note: edited by Rongming Chu, Keisuke Shinohara.
  note: Includes bibliographical references and index.
  note: Current copyright fee: GBP32.84 5 1. Uk
  subject:
    topic: Electronic apparatus and appliances
  subject:
    topic: Nitrides
  subject:
    topic: Electronic apparatus and appliances
  subject:
    topic: Nitrides
  classification: TK7871.15.N57 A15 2019
  classification: 621.3815
  related item:
    title info:
      title: Semiconductors and semimetals ; v. 102
  identifier: 9780128175446
  identifier: 0128175443
  identifier: 9780128175453 (ePub ebook)
  access condition: Current copyright fee: GBP32.84 5 1. Uk
  record info:
    record content source: YDX
    record creation date: 190314
    record change date: 20260407125403.9
    record identifier: in00004135116
    language of cataloging:
      language term: eng