rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: GAAs High-Speed Devices
    sub title: Physics, Technology, and Circuit Applications
  name:
    name part: Chang, C.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Kai, Francis
    role:
      role term: author.
  name:
    name part: Safari, an O'Reilly Media Company
  type of resource: text
  genre: Electronic books.
  origin info:
    place:
      place term: xx
    date issued: 1994
    edition: 1st edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (640 pages)
  abstract: The performance of high-speed semiconductor devices-the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics-is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible-as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previou…
  note: Chang, C..
  note: Electronic resource.
  note: Electronic reproduction. Boston, MA : Safari, Available via World Wide Web. 1994.
  note: Mode of access: World Wide Web.
  identifier: 9780471856412
  identifier: 047185641X
  identifier: https://proxy.library.tamu.edu/login
  record info:
    record creation date: 080513
    record change date: 20260123212955.9
    record identifier: in00004126851