http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Characterization of Wide Bandgap Power Semiconductor Devices
Institution of Engineering and Technology
The book has 11 chapters and covers the following topics: Pulsed static characterization; Junction capacitance characterization; Fundamentals of dynamic characterization; Gate drive for dynamic characterization; Layout design and parasitic management; Protection design for double pulse test; Measurement and data processing for dynamic characterization; Cross-talk consideration; Impact of three-phase system; Topology consideration; and Appendices on Recommended equipment and components list for DPT setup; and Data processing code for dynamic characterization are given.
Fei (Fred) Wang, Zheyu Zhang and Edward A. Jones.
wide bandgap power semiconductor devices