rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: High Frequency MOSFET Gate Drivers
    sub title: Technologies and Applications
  name:
    name part: Yan-Fei Liu
    role:
      role term: editor.
  name:
    name part: ZhiLiang Zhang
    role:
      role term: editor.
  name:
    name part: Institution of Engineering and Technology
  type of resource: text
  origin info:
    place:
      place term: enk
    date issued: 2017
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: remote
    extent: 1 online resource (300 pages)
  abstract: In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and improve the power density significantly. However, this results in high-switching loss and gate-driver loss of the power MOSFETs. This book is about high-frequency power MOSFET gate driver technologies, including the gate drivers for the GaN HEMTs, which have great potential in the next generation switching-power converters. The gate drivers serve a critical role between the control and power devices. Although there are numerous research papers talking about the MOSFET gate drivers, there is actually no such a book focusing on the gate driver topic systematically. The contents mainly cover the state-of-the-art power MOSFET drive technique, the switching-loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers, and GaN HEMT gate drivers. The novel approach in this book is the proposed CSDs including different topologies, control, and applications. The CSD can reduce the switching-transition time and switching loss significantly, and recover high-frequency gate-driver loss compared to the conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high-frequency switching performance such as SiC MOSFET, IGBT, et cetera It is expected that this book will be very useful to the design engineers in switching power supplies with various backgrounds. It can serve as a fundamental textbook to the undergraduates, graduates, and professionals in the power electronics field. We would like to thank our colleagues at Queen's Power Group. In particular, we would like to thank Wilson Eberle, Zhihua Yang, and Jizhen Fu for their contribution to the CSDs. We would also like to thank our graduate students in Nanjing University of Aeronautics and Astronautics, and they are Peng-Cheng Xu, Chuan-Gang Xu, Wei Cai, Jing-Ya Lin, Fei-Fei Li, Yuan Zhou, Zho…
  target audience: specialized
  note: Zhi-Liang Zhang (zlzhang@nuaa.edu.cn); Yan-Fei Liu (yanfei.liu@queensu.ca).
  subject:
    topic: Conversion
  subject:
    topic: Silicon compounds
  subject:
    topic: Switching circuits
  subject:
    topic: HEMT circuits
  subject:
    topic: constant current sources
  subject:
    topic: driver circuits
  subject:
    topic: gallium compounds
  subject:
    topic: insulated gate bipolar transistors
  subject:
    topic: power MOSFET
  subject:
    topic: silicon compounds
  subject:
    topic: switching convertors
  subject:
    topic: CSDs
  subject:
    topic: GaN
  subject:
    topic: GaN HEMT gate drivers
  subject:
    topic: IGBT
  subject:
    topic: SiC
  subject:
    topic: SiC MOSFET
  subject:
    topic: adaptive gate drivers
  subject:
    topic: current source gate drivers
  subject:
    topic: gate-driver loss
  subject:
    topic: high-frequency power MOSFET gate driver technologies
  subject:
    topic: high-switching loss
  subject:
    topic: multiMHz
  subject:
    topic: next generation switching-power converters
  subject:
    topic: passive components
  subject:
    topic: power density
  subject:
    topic: power devices
  subject:
    topic: power electronics field
  subject:
    topic: resonant gate drivers
  subject:
    topic: state-of-the-art power MOSFET drive technique
  subject:
    topic: switching frequency
  subject:
    topic: switching power supplies
  subject:
    topic: switching-loss model
  subject:
    topic: switching-transition time
  subject:
    topic: voltage gate drivers
  related item:
    title info:
      title: Materials, Circuits & Devices
  identifier: 9781785613661
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: UkSgIET
    record creation date: 171120
    record change date: 20210305144634.0
    record identifier: in00004089790
    language of cataloging:
      language term: eng