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Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /

Bibliographic Details
Corporate Author: National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division
Other Authors: Allen, Ricky, Blackburn, David L., Schafft, Harry A., Yarimbiyik, A. Emre, Zaghloul, Mona E.
Format: Government Document eBook
Language:English
Published: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology, [2006]
Series:NISTIR ; 7234.
Subjects:
Nanoelectromechanical systems.
Thin films > Size effects > Computer simulation.
Online Access:https://purl.fdlp.gov/GPO/gpo99378

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