Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /

Bibliographic Details
Corporate Author: National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division
Other Authors: Allen, Ricky, Blackburn, David L., Schafft, Harry A., Yarimbiyik, A. Emre, Zaghloul, Mona E.
Format: Government Document eBook
Language:English
Published: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology, [2006]
Series:NISTIR ; 7234.
Subjects:
Online Access:https://purl.fdlp.gov/GPO/gpo99378

MARC

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245 0 0 |a Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /  |c A. Emre Yarimbiyik [and others]. 
264 1 |a [Gaithersburg, MD] :  |b U.S. Dept. of Commerce, National Institute of Standards and Technology,  |c [2006] 
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500 |a Title from page [1], viewed March 7, 2007. 
504 |a Includes bibliographical references. 
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650 0 |a Nanoelectromechanical systems.  |0 http://id.loc.gov/authorities/subjects/sh2006008121 
650 0 |a Thin films  |x Size effects  |x Computer simulation. 
650 7 |a Nanoelectromechanical systems.  |2 fast  |0 (OCoLC)fst01741807 
700 1 |a Allen, Ricky.  |0 http://id.loc.gov/authorities/names/n94020678 
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700 1 |a Yarimbiyik, A. Emre. 
700 1 |a Zaghloul, Mona E. 
710 2 |a National Institute of Standards and Technology (U.S.).  |b Semiconductor Electronics Division.  |0 http://id.loc.gov/authorities/names/no90015380 
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