Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /

Bibliographic Details
Corporate Author:	National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division
Other Authors:	Allen, Ricky, Blackburn, David L., Schafft, Harry A., Yarimbiyik, A. Emre, Zaghloul, Mona E.
Format:	Government Document eBook
Language:	English
Published:	[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology, [2006]
Series:	NISTIR ; 7234.
Subjects:	Nanoelectromechanical systems. Thin films > Size effects > Computer simulation.
Online Access:	https://purl.fdlp.gov/GPO/gpo99378

Description
Item Description:	"February 2006." Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes. Title from page [1], viewed March 7, 2007. Electronic resource.
Physical Description:	1 online resource (21 unnumbered page) : illustrations.
Bibliography:	Includes bibliographical references.