APA (7th ed.) Citation

National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division, Allen, R., Blackburn, D. L., Schafft, H. A., Yarimbiyik, A. E., & Zaghloul, M. E. (2006). Implementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects. U.S. Dept. of Commerce, National Institute of Standards and Technology.

Chicago Style (17th ed.) Citation

National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division, Ricky Allen, David L. Blackburn, Harry A. Schafft, A. Emre Yarimbiyik, and Mona E. Zaghloul. Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects. [Gaithersburg, MD]: U.S. Dept. of Commerce, National Institute of Standards and Technology, 2006.

MLA (9th ed.) Citation

National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division, et al. Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects. U.S. Dept. of Commerce, National Institute of Standards and Technology, 2006.