Modeling nanowire and double-gate junctionless field-effect transistors /
| Main Authors: | , |
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| Format: | eBook |
| Language: | English |
| Published: |
Cambridge, United Kingdom ; New York, NY, USA :
Cambridge University Press,
2018.
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| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- Cover; Half Title; Title page; Imprints page; Contents; Foreword; Preface; List of Abbreviations; List of Symbols; 1 Introduction; 1.1 The Birth of the Transistor; 1.2 The Metal-Oxideâ#x80;#x93;Semiconductor Field-Effect Transistor; 1.3 Moore's Law, Limits of CMOS Scaling, and Alternative MOSFET Structures; 1.3.1 Scaling in Bulk MOSFETs; 1.3.2 Silicon-on-Insulator MOSFETs; 1.4 The Junctionless Concept; 1.4.1 Working Principle of Junctionless MOSFETs; 1.4.2 Diversity in Junctionless Architectures; 1.5 Short-Channel Effects in Junctionless FETs; 1.6 Mobility in Junctionless FETs
- 1.7 The Critical Aspect of Random Dopant Fluctuation1.7.1 Random Dopant Fluctuations in Junctionless FETs; 1.8 Summary; 2 Review on Modeling Junctionless FETs; 2.1 Modeling Junctionless Double-Gate MOSFETs; 2.1.1 Full Depletion Approximation; 2.1.2 Enhanced Depletion Approximation; 2.1.3 Surface Potential-based Approach; 2.1.4 Simplified Current Model Involving Pinch-Off; 2.1.5 Semiempirical Charge-based Approach; 2.1.6 Analytical Approach based on Conventional Inversion-Mode MOSFETs; 2.1.7 Parabolic Approximation and Full-Range Drain Current
- 2.1.8 Gaussian Distribution of Mobile Charge Density2.1.9 Simple Model to Estimate Junctionless FET Performances; 2.1.10 Explicit Drain Current Model Relying on Charge-based Approach; 2.1.11 Modeling of Quantum Mechanical Effects; 2.1.12 Short-Channel Effects in Subthreshold; 2.1.13 Transcapacitance Modeling; 2.1.14 Modeling Asymmetry in Junctionless Double-Gate MOSFETs; 2.2 Modeling Junctionless Nanowire MOSFETs; 2.2.1 Short-Channel Effects in the Subthreshold; 2.2.2 Transcapacitance Modeling in Junctionless Nanowire FETs; 2.2.3 Quantum Mechanical Effects in Junctionless Nanowire FETs
- 2.3 Summary3 The EPFL Charge-based Model of Junctionless Field-Effect Transistors; 3.1 Charge-based Modeling of Junctionless Double-Gate Field-Effect Transistors; 3.1.1 Recalling Basics of Semiconductor Statistics; 3.1.2 Approximate Solution of the Poissonâ#x80;#x93;Boltzmann Equation in Junctionless Double-Gate MOSFET; 3.1.3 Introduction of Symmetric Gate Capacitances; 3.1.4 Derivation of Explicit Voltageâ#x80;#x93;Charge Relationships; 3.1.5 Analytical versus Numerical Simulations; 3.1.6 Threshold Voltage in Junctionless FETs; 3.1.7 Derivation of the Channel Current; 3.1.8 Evaluation of the Charge Integral
- 3.1.9 General Treatment of the Current in Junctionless Double-Gate MOSFETs3.1.10 Simulation Results; 3.2 A Common Core Model for Junctionless Nanowires and Symmetric DG FETs; 3.2.1 Analysis of Electrostatics in Junctionless Nanowire FETs; 3.2.2 Derivation of the Current in a Junctionless Nanowire; 3.2.3 Simulations; 3.3 Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs; 3.3.1 Approximated Solution in Depletion; 3.3.2 Approximated Solution in Accumulation Mode; 3.3.3 Approximated Solution in Weak Accumulation Mode; 3.4 Summary