rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: CMOS past, present and future
  name:
    name part: Radamson, Henry H.
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: Electronic books.
  origin info:
    place:
      place term: enk
    date issued: 2018
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  table of contents: 1. Brief introduction CMOS applications in our daily life; 2. Basic definitions and equations; 3. Electrical measurements (IV, short channel effects, mobility and noise); 4. CMOS Architecture; 5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners); 6. High-k and metal gate (Almost all known high-k materials and metal gates); 7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds); 8. Contacts (Silicide formation, contact resistance, parasitic contacts); 9. Integration with photonic components (CMOS with lasers, detectors); 10. Technology roadmap (starting from 50's to unknown future); 11. Authors' final words.
  note: Henry H. Radamson [and others].
  note: Includes index.
  note: Electronic resource.
  subject:
    topic: Metal oxide semiconductors, Complementary
  classification: TK7871.99.M44 C56 2018
  classification: 537.6/223
  related item:
    title info:
      title: Woodhead Publishing series in electronic and optical materials
  identifier: 9780081021408
  identifier: 0081021402
  identifier: 0081021399
  identifier: 9780081021392
  identifier: 9780081021408 Ingram Content Group
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: NhCcYBP
    record creation date: 180409
    record change date: 20260609153732.3
    record identifier: in00004024739