3D TCAD Simulation for CMOS Nanoeletronic Devices /

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the buil...

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Bibliographic Details
Main Authors:	Wu, Yung-Chun (Author), Jhan, Yi-Ruei (Author)
Corporate Author:	SpringerLink (Online service)
Format:	eBook
Language:	English
Published:	Singapore : Springer Singapore : Imprint: Springer, 2018.
Subjects:	Electronics. Engineering. Industrial engineering. Electronics and Microelectronics, Instrumentation. Semiconductors. Nanotechnology and Microengineering. Industrial and Production Engineering. Electronic books.
Online Access:	Connect to the full text of this electronic book

Table of Contents:

Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools
Simulation analysis of 2D MOSFET
Simulation analysis of 3D FinFET with LG = 15 nm
Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm
Simulation analysis of GAA NWFET
Simulation analysis of Junctionless FET with LG = 10 nm
Simulation analysis of Tunnel FET
Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.