Handbook of thin film deposition /

Bibliographic Details
Corporate Author: ScienceDirect (Online service)
Other Authors: Seshan, Krishna (Editor), Schepis, Dominic (Editor)
Format: eBook
Language:English
Published: Oxford, United Kingdom ; Cambridge, MA, United States : William Andrew, and imprint of Elsevier, [2018]
Edition:Fourth edition.
Subjects:
Online Access:Connect to the full text of this electronic book

MARC

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245 0 0 |a Handbook of thin film deposition /  |c edited by Krishna Seshan, Dominic Schepis. 
250 |a Fourth edition. 
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300 |a 1 online resource. 
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500 |a Includes index. 
588 0 |a Vendor-supplied metadata. 
505 0 |a Front Cover; Handbook of Thin Film Deposition; Copyright Page; Dedication; Contents; List of Contributors; Biographies; Preface; I. Scaling; 1 A Perspective on Todayâ#x80;#x99;s Scaling Challenges and Possible Future Directions; 1.1 Introduction; 1.2 Review and Update of Generalized Scaling; 1.3 Energy/Performance Considerations; 1.4 Design Issues with Back-Gated Thin SOI CMOS; 1.5 Carrier Confinement and Quantization Effects; 1.6 Potential of Low-Temperature Operation; 1.7 Conclusion; Acknowledgments; References; 2 Limits and Hurdles to Continued CMOS Scaling; 2.1 Terminology; 2.2 Costs 
505 8 |a 2.3 ITRS Roadmap-based Issues2.4 Issues in Device Scaling; 2.5 Scaling Basics and Results; 2.5.1 Contact Spacing and SRAM Size; 2.6 Lithography; 2.6.1 Resolution; 2.7 Litho Wavelength Evolution; 2.7.1 CMOS Scaling and Various Leakages; 2.7.2 Ioff Leakage, Tunneling Current, Source-Drain Leakage; 2.7.3 Increase of ON-current; 2.7.4 Leakage Currents and the Limits Imposed by Them; 2.7.5 Gate Overlap Capacitance; 2.7.6 Subthreshold Leakage; 2.7.7 Hot-e Leakage; 2.8 Limits created by a falling Vt and Vcc; 2.9 Scaling Limits and Device Limitationsâ#x80;#x94;Roadmap Based; 2.9.1 Scaling of Memory: GIDL 
505 8 |a 2.9.2 New Device Features and New Materials2.9.3 Use of Si-Ge and strained layers to enhance mobility: is this scalable?; 2.9.4 New Materials: Graphene; 2.10 Back-End Scaling Issues; 2.10.1 Back-End Scaling: Contact Pitch; 2.10.2 SRAM Cell Size; 2.10.3 Metal Layers: Metal/Dielectric Scaling/the Need for New Materials; 2.10.4 Thermal Conductivity Limits: Cooling Issues; 2.10.5 Low-temperature Liquid Nitrogen Cooled Computers; 2.10.6 Thermodynamic Considerations: Noise; 2.11 Fluctation in Dopant Distribution: Effect on Vt Thermodynamic issues 
505 8 |a 2.11.1 Thermal Fluctuations, Thermodynamics of Computations: the Work of Bennett, Keyes, and Feynman2.11.2 Heat Production and Chip Cooling; 2.12 Considerations in Heat Production; 2.13 Conclusions; References; Classic Papers; Cost of Fabricators; ITRS Roadmap Publications; Lithography; Device Scaling Limits; Metal Gates; FINFETS; NanoWires; Leakage Currents in Transistors; Gate Leakage; Leakages as a Limiter in Scaling; References to Graphene; Heat Production; Also see chapter 4 on Thermal Limits; This Handbook; Limits of Computing; Low-temperature Electronics; Further Reading 
505 8 |a 3 Reliability Issues: Reliability Imposed Limits to Scaling3.1 Introduction and History; 3.1.1 History of Reliability; 3.1.2 New and Traditional Views of Reliability; 3.1.3 Concerns of Reliability; 3.1.4 Display of Reliability Data; 3.2 Reliability Testing Procedures; 3.3 Front-End Reliability Issues Impacting Scaling and Various Leakages; 3.4 Back-end Reliability; 3.4.1 Thermally Activated Failures; Arrhenius Equation and Electromigration; 3.4.2 Electromigration and Blackâ#x80;#x99;s equation; 3.4.3 Physically based models of electromigration: From Blackâ#x80;#x99;s equation to modern TCAD models 
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