The formation of structural imperfections in semiconductor silicon /

Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon....

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Bibliographic Details
Main Authors: Talanin, V. I. (Vitaliĭ Igorʹevich) (Author), Talanin, I. E. (Igor Evgenievich) (Author)
Format: Book
Language:English
Published: Newcastle upon Tyne, UK : Cambridge Scholars Publishing, 2018.
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Description
Summary:Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon, the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Physical Description:xii, 269 pages : illustrations ; 22 cm.
Bibliography:Includes bibliographical references.
ISBN:1527506355
9781527506350