Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP /

Bibliographic Details
Main Author:	Pantic, Dragan M. (Author)
Format:	Government Document eBook
Language:	English
Published:	Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, [1990]
Series:	NASA technical memorandum ; 102544.
Subjects:	Capacitance-voltage characteristics. Electron beams. Indium phosphides. Irradiation. Phosphorus. Plasmas (physics) Radiation damage. Vapor deposition.
Online Access:	https://purl.fdlp.gov/GPO/LPS69699

Published 1990

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