The role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in mobile technology platforms /

Bibliographic Details
Main Author:	Mitchell, Gregory A. (Author)
Format:	Government Document eBook
Language:	English
Published:	Adelphi, MD : Army Research Laboratory, September 2011.
Series:	ARL-TN ; 0459.
Subjects:	Bipolar transistors. Silicon. Germanium. Digital communications.
Online Access:	https://purl.fdlp.gov/GPO/gpo82619

Description
Physical Description:	1 online resource (vi, 30 pages) : illustrations.
Bibliography:	Includes bibliographical references (page 27).
Access:	Approved for public release; distribution unlimited.