http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
physics of devices and materials in one dimension
Cover ; Half-title page; Title page; Copyright page; Dedication; Contents; Preface; 1 Introduction; 1.1 Moore's law; 1.2 The MOS transistor; 1.3 Classical scaling laws; 1.4 Short-channel effects; 1.5 Technology boosters; 1.5.1 New materials; 1.5.2 Strain; 1.5.3 Electrostatic control of the channel; 1.6 Ballistic transport in nanotransistors; 1.6.1 Top-of-the-barrier model; 1.6.2 Ballistic scaling laws; 1.7 Summary; References; 2 Multigate and nanowire transistors; 2.1 Introduction; 2.2 The multigate architecture; 2.3 Reduction of short-channel effects using multigate architectures.
2.3.1 Single-gate MOSFET2.3.2 Double-gate MOSFET; 2.3.3 Triple- and quadruple-gate MOSFETs; 2.3.4 Cylindrical gate-all-around MOSFET; 2.4 Quantum confinement effects in nanoscale multigate transistors; 2.4.1 Energy subbands; 2.4.2 Increase of band gap energy; 2.4.3 Quantum capacitance; 2.4.4 Valley occupancy and transport effective mass; 2.4.5 Semimetal-semiconductor nanowire transitions; 2.4.6 Topological insulator nanowire transistor; 2.4.7 Nanowire-SET transition; 2.5 Other multigate field-effect devices; 2.5.1 Junctionless transistor; 2.5.2 Tunnel field-effect transistor; 2.6 Summary.
Further readingReferences; 3 Synthesis and fabrication of semiconductor nanowires; 3.1 Top-down fabrication techniques; 3.1.1 Horizontal nanowires; 3.1.2 Vertical nanowires; 3.2 Bottom-up fabrication techniques; 3.2.1 Vapor-liquid-solid growth technique; 3.2.2 Growth without catalytic particles; 3.2.3 Heterojunctions and core-shell nanowires; 3.3 Silicon nanowire thinning; 3.3.1 Hydrogen annealing; 3.3.2 Oxidation; 3.3.3 Mechanical properties of silicon nanowires; 3.4 Carrier mobility in strained nanowires; 3.5 Summary; References; 4 Quantum mechanics in one dimension; 4.1 Overview.
4.2 Survey of quantum mechanics in 1D4.2.1 Schrödinger wave equation in one spatial dimension; 4.2.2 Electron current in quantum mechanics; 4.2.3 Quantum mechanics in momentum space; 4.3 Momentum eigenstates; 4.4 Electron incident on a potential energy barrier; 4.5 Electronic band structure; 4.5.1 Brillouin zone; 4.5.2 Bloch wave functions; 4.6 LCAO and tight binding approximation; 4.6.1 Linear combination of atomic orbitals (LCAO); 4.6.2 Tight binding approximation; 4.7 Density of states and energy subbands; 4.7.1 Density of states in three spatial dimensions.
4.7.2 Density of states in two spatial dimensions4.7.3 Density of states in one spatial dimension; 4.7.4 Comparison of 3D, 2D, and 1D density of states; 4.8 Conclusions; Further reading; References; 5 Nanowire electronic structure; 5.1 Overview; 5.2 Semiconductor crystal structures: group IV and III-V materials; 5.2.1 Group IV bonding and the diamond crystal structure; 5.2.2 III-V compounds and the zincblende structure; 5.2.3 Two-dimensional materials; 5.3 Insulators, semiconductors, semimetals, and metals; 5.4 Experimental determination of electronic structure.
Includes bibliographical references and index.