rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Resistive random access memory (RRAM)
    sub title: from devices to array architectures
  title info:
    title: Synthesis digital library of engineering and computer science
  name:
    name part: Yu, Shimeng.
    role:
      role term: creator
    role:
      role term: author.
  type of resource: text
  genre: abstract or summary
  genre: Electronic books.
  origin info:
    place:
      place term: cau
    date issued: 2016
    issuance: monographic
  language:
    language term: eng
  physical description:
    reformatting quality: access
    form: remote
    extent: 1 online resource (vii, 71 pages) : illustrations.
  abstract: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM's potential novel applications beyond the NVM applications.
  table of contents: 1. Introduction to RRAM technology -- 1.1 Overview of emerging memory technologies -- 1.2 RRAM basics -- 1.3 Recent research and development of RRAM technology --
  table of contents: 2. Device fabrication and performances -- 2.1 Device fabrication: forming-free and scalability -- 2.2 Device performances -- 2.3 Device reliability --
  table of contents: 3. RRAM characterization and modeling -- 3.1 Overview of RRAM physical mechanism -- 3.2 Materials and electrical characterization -- 3.3 Numerical modeling using kinetic Monte-Carlo method -- 3.4 Compact modeling for spice simulation --
  table of contents: 4. RRAM array architecture -- 4.1 1T1R array -- 4.2 Cross-point array -- 4.3 Selector device -- 4.4 Peripheral circuits design -- 4.5 3D integration --
  table of contents: 5. Outlook for RRAM's applications -- Bibliography -- Author biography.
  target audience: specialized
  note: Shimeng Yu.
  note: Abstract freely available; full-text restricted to subscribers or individual document purchasers.
  note: Also available in print.
  note: Mode of access: World Wide Web.
  note: System requirements: Adobe Acrobat Reader.
  note: Includes bibliographical references (pages 57-69).
  subject:
    topic: Nonvolatile random-access memory
  subject:
    topic: RRAM
  subject:
    topic: ReRAM
  subject:
    topic: non-volatile memory
  subject:
    topic: resistive switching
  classification: TK7895.M4 Y87 2016
  classification: 621.39732
  related item:
    title info:
      title: Synthesis lectures on emerging engineering technologies ; # 6
  identifier: 9781627059305
  identifier: 9781627059299
  identifier: http://proxy.library.tamu.edu/login
  access condition: Abstract freely available; full-text restricted to subscribers or individual document purchasers.
  record info:
    record content source: CaBNVSL
    record creation date: 160320
    record change date: 20210728125151.0
    record identifier: in00003778575
    language of cataloging:
      language term: eng