Compound semiconductor materials and devices /
| Main Authors: | , , , , |
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| Format: | eBook |
| Language: | English |
| Published: |
San Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) :
Morgan & Claypool,
2016.
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| Series: | Synthesis lectures on emerging engineering technologies ;
# 3. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
| Abstract: | Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices. |
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| Physical Description: | 1 online resource (vii, 65 pages) : illustrations. Also available in print. |
| Format: | Mode of access: World Wide Web. System requirements: Adobe Acrobat Reader. |
| Bibliography: | Includes bibliographical references (pages 47-62). |
| ISBN: | 9781627058537 |
| ISSN: | 2381-1439 ; |
| DOI: | 10.2200/S00695ED1V01Y201601EET003 |
| Access: | Abstract freely available; full-text restricted to subscribers or individual document purchasers. |