Transient electro-thermal modeling of bipolar power semiconductor devices /

Bibliographic Details
Main Authors:	Gachovska, Tanya Kirilova (Author), Du, Bin (Author), Hudgins, Jerry L. (Author), Santi, Enrico (Author)
Format:	eBook
Language:	English
Published:	San Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) : Morgan & Claypool, 2014.
Series:	Synthesis lectures on power electronics ; # 6.
Subjects:	Insulated gate bipolar transistors > Mathematical models. Power semiconductors > Mathematical models. Fourier series solution carrier diffusion drift region modules packaging physics-based model power semiconductor devices thermal model transient switching behavior Electronic books.
Online Access:	Connect to the full text of this electronic book

Table of Contents:

Nomenclature
1. Temperature dependencies of material and device parameters
1.1 Introduction
1.2 Temperature dependencies
1.2.1 Intrinsic carrier concentration
1.2.2 Ionized donor impurity concentration
1.2.3 Carrier mobility
1.2.4 Lifetime
1.2.5 Emitter recombination parameters
1.2.6 Threshold voltage and transconductance
2. One-dimensional thermal model
2.1 Package design
2.2 Heat conduction problem in DBC structure
2.3 Equivalent RC network thermal model
2.4 One-dimensional Fourier series thermal model
3. Realization of Power IGBT and diode thermal model
3.1 Introduction
3.2 Realization of equivalent RC network
3.3 Realization of one-dimensional Fourier-series thermal model
3.4 Temperature dependent parameters of diodes and their connection to an electrical model
3.5 Temperature-dependent parameters of NPT IGBT and their connection to the electrical model
A. Appendix
References
Authors' biographies.