Transient electro-thermal modeling of bipolar power semiconductor devices /
| Main Authors: | , , , |
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| Format: | eBook |
| Language: | English |
| Published: |
San Rafael, California (1537 Fourth Street, San Rafael, CA 94901 USA) :
Morgan & Claypool,
2014.
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| Series: | Synthesis lectures on power electronics ;
# 6. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
| Abstract: | This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semi-conductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. |
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| Item Description: | Series from website. |
| Physical Description: | 1 online resource (xvi, 68 pages) : illustrations. Also available in print. |
| Format: | Mode of access: World Wide Web. System requirements: Adobe Acrobat Reader. |
| Bibliography: | Includes bibliographical references (page 65). |
| ISBN: | 9781627051903 |
| ISSN: | 1931-9533 ; |
| DOI: | 10.2200/S00547ED1V01Y201311PEL006 |
| Access: | Abstract freely available; full-text restricted to subscribers or individual document purchasers. |