Fast risetime reverse bias pulse failures in SiC PN junction diodes /

Bibliographic Details
Main Authors:	Nuedeck, Philip G. (Author), Faziz, Christian (Author), Parsons, James D. (Author)
Corporate Author:	United States. National Aeronautics and Space Administration (sponsoring body.)
Format:	Government Document eBook
Language:	English
Published:	Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, June 1996.
Series:	NASA technical memorandum ; 107256.
Subjects:	P-n junctions. Semiconductors (materials) Silicon carbides. High temperature environments. Bias. Doped crystals. Energy gaps (solid state)
Online Access:	https://purl.fdlp.gov/GPO/gpo69224

Description
Item Description:	Title from title screen (viewed July 12, 2016). "June 1996"--Report documentation page. "Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, June 9-14, 1996." "Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
Physical Description:	1 online resource (6 pages) : illustrations.
Bibliography:	Includes bibliographical references (page 6).