Hot-Carrier Reliability of MOS VLSI Circuits /
This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and...
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| Format: | eBook |
| Language: | English |
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Boston, MA :
Springer US,
1993.
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| Series: | Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing ;
227. |
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| Online Access: | Connect to the full text of this electronic book |
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