Hot-Carrier Reliability of MOS VLSI Circuits /
This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and...
| Main Author: | |
|---|---|
| Corporate Author: | |
| Other Authors: | |
| Format: | eBook |
| Language: | English |
| Published: |
Boston, MA :
Springer US,
1993.
|
| Series: | Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing ;
227. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
| Summary: | This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and simulation methods for estimating hot-carrier effects in the circuit environment. The newly emerging approaches to the VLSI design-for-reliability and rule-based reliability diagnosis are also discussed in detail. Hot-Carrier Reliability of MOS VLSI Circuits is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models. VLSI designers will benefit from this book since it offers a comprehensive overview of the interacting mechanisms that influence hot-carrier reliability, and also provides useful guidelines for reliable VLSI design. This volume can be used as an advanced textbook or reference for a graduate-level course on VLSI reliability. |
|---|---|
| Item Description: | Electronic resource. |
| Physical Description: | 1 online resource (xvii, 212 pages) |
| ISBN: | 9781461532507 (electronic bk.) 1461532507 (electronic bk.) |
| ISSN: | 0893-3405 ; |