Hierarchical Device Simulation : the Monte-Carlo Perspective /
This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a c...
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| Format: | eBook |
| Language: | English |
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Vienna :
Springer Vienna,
2003.
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| Series: | Computational microelectronics.
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| Online Access: | Connect to the full text of this electronic book |
| Summary: | This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator. |
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| Item Description: | Electronic resource. |
| Physical Description: | 1 online resource (xvi, 254 pages 147 illustrations) |
| ISBN: | 9783709160862 (electronic bk.) 3709160863 (electronic bk.) |
| ISSN: | 0179-0307 |