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Ferroelectric memories /

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Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied...

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Bibliographic Details
Main Author: Scott, J. F. (James Floyd), 1942-
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Berlin ; New York : Springer, 2000.
Series:Springer series in advanced microelectronics ; 3.
Subjects:
Ferroelectric storage cells.
Materials Science.
Metallic Materials.
Electronics and Microelectronics, Instrumentation.
Memory Structures.
Dünne Schicht.
Speicherzelle.
Ferroelektrizität.
Ferroelektrikum.
Electronic books.
Online Access:Connect to the full text of this electronic book
Table of Contents:
  • 1. Introduction
  • 2. Basic Properties of RAMs (Random Access Memories)
  • 3. Electrical Breakdown (DRAMs and NV-RAMs)
  • 4. Leakage Currents
  • 5. Capacitance
  • Voltage Data: C(V)
  • 6. Switching Kinetics
  • 7. Charge Injection and Fatigue
  • 8. Frequency Dependence
  • 9. Phase Sequences in Processing
  • 10. SBT-Family Aurivillius-Phase Layer Structures
  • 11. Deposition and Processing
  • 12. Nondestructive Read-Out Devices
  • 13. Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10-100 GHz Devices
  • 14. Wafer Bonding
  • 15. Electron-Emission and Flat-Panel Displays
  • 16. Optical Devices
  • 17. Nanophase Devices
  • 18. Drawbacks and Disadvantages.