Ferroelectric memories /

Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied...

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Bibliographic Details
Main Author: Scott, J. F. (James Floyd), 1942-
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Berlin ; New York : Springer, 2000.
Series:Springer series in advanced microelectronics ; 3.
Subjects:
Online Access:Connect to the full text of this electronic book
Description
Summary:Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.
Physical Description:1 online resource (xvi, 248 pages) : illustrations.
Bibliography:Includes bibliographical references (pages 225-243) and index.
ISBN:9783662043073 (electronic bk.)
3662043076 (electronic bk.)