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Analysis and Simulation of Heterostructure Devices /

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different...

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Bibliographic Details
Main Author: Palankovski, Vassil
Corporate Author: SpringerLink (Online service)
Other Authors: Quay, Rüdiger
Format: eBook
Language:English
Published: Vienna : Springer Vienna, 2004.
Series:Computational microelectronics.
Subjects:
Engineering.
Computer simulation.
Microwaves.
Electronics.
Optical materials.
Surfaces (Physics)
Electronic books.
Online Access:Connect to the full text of this electronic book
Description
Summary:The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Item Description:Electronic resource.
Physical Description:1 online resource (v, 289 pages)
ISBN:9783709105603 (electronic bk.)
3709105609 (electronic bk.)
ISSN:0179-0307