rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Wide Band Gap Electronic Materials
  title info:
    title: Proceedings of the NATO Advanced Research Workshop on 'Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994
  name:
    name part: Prelas, Mark A.
    role:
      role term: creator
  name:
    name part: Gielisse, Peter.
  name:
    name part: Popovici, Galina.
  name:
    name part: Spitsyn, Boris V.
  name:
    name part: Stacy, Tina.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  genre: Electronic books.
  genre: Conference proceedings.
  origin info:
    place:
      place term: ne
    date issued: 1995
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (552 pages)
  abstract: Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n-type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond. One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices. Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants. Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
  note: edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy.
  note: Electronic resource.
  subject:
    topic: Wide gap semiconductors
    genre: Congresses
  subject:
    topic: Electronics
    topic: Materials
    genre: Congresses
  subject:
    topic: Electronics
    topic: Materials
  subject:
    topic: Wide gap semiconductors
  classification: TK7870
  classification: 621.3815/2
  related item:
    title info:
      title: NATO ASI Series, 3. High Technology, ; 1
  identifier: 9789401101738 (electronic bk.)
  identifier: 9401101736 (electronic bk.)
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: I9W
    record creation date: 121227
    record change date: 20260420213241.8
    record identifier: in00003555932
    language of cataloging:
      language term: eng