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Chemical-mechanical polishing of low dielectric constant polymers and organosilicate glasses : fundamental mechanisms and application to IC interconnect technology /

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As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main c...

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Bibliographic Details
Main Author: Borst, Christopher L. (Christopher Lyle)
Corporate Author: SpringerLink (Online service)
Other Authors: Gill, William N., Gutmann, Ronald J.
Format: eBook
Language:English
Published: Boston : Kluwer Academic Publishers, [2002]
Subjects:
Interconnects (Integrated circuit technology)
Semiconductors > Polishing.
Grinding and polishing.
Chemical mechanical planarization.
Electronic books.
Online Access:Connect to the full text of this electronic book
Table of Contents:
  • Ch. 1. Overview of IC Interconnects. 1.1. Silicon IC Beol Technology Trends. 1.2. SIA Roadmap Interconnect Projections. 1.3. Low-[kappa] Requirements and Materials. 1.4. Need for Low-[kappa] CMP Process Understanding
  • Ch. 2. Low-[kappa] Interlevel Dielectrics. 2.1. Fluorinated Glasses. 2.2. Silsesquioxanes. 2.3. Organosilicate Glasses. 2.4. Polymers. 2.5. Fluorinated Hydrocarbons. 2.6. Nanoporous Silica Films. 2.7. Other Porous Materials
  • Ch. 3. Chemical-Mechanical Planarization (CMP). 3.1. CMP Process Description. 3.2. CMP Processes with Copper Metallization. 3.3. CMP of Low-[kappa] Materials. 3.4. CMP Process Models. 3.5. Langmuir-Hinshel Wood Surface Kinetics in CMP Modeling
  • Ch. 4. CMP of BCB and SiLK Polymers.