http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Chemical-mechanical polishing of low dielectric constant polymers and organosilicate glasses
fundamental mechanisms and application to IC interconnect technology
Borst, Christopher L. (Christopher Lyle)
1 online resource (xiv, 229 pages) : illustrations.
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
Ch. 1. Overview of IC Interconnects. 1.1. Silicon IC Beol Technology Trends. 1.2. SIA Roadmap Interconnect Projections. 1.3. Low-[kappa] Requirements and Materials. 1.4. Need for Low-[kappa] CMP Process Understanding -- Ch. 2. Low-[kappa] Interlevel Dielectrics. 2.1. Fluorinated Glasses. 2.2. Silsesquioxanes. 2.3. Organosilicate Glasses. 2.4. Polymers. 2.5. Fluorinated Hydrocarbons. 2.6. Nanoporous Silica Films. 2.7. Other Porous Materials -- Ch. 3. Chemical-Mechanical Planarization (CMP). 3.1. CMP Process Description. 3.2. CMP Processes with Copper Metallization. 3.3. CMP of Low-[kappa] Materials. 3.4. CMP Process Models. 3.5. Langmuir-Hinshel Wood Surface Kinetics in CMP Modeling -- Ch. 4. CMP of BCB and SiLK Polymers.
by Christopher L. Borst, William N. Gill, Ronald J. Gutmann.
Includes bibliographical references and index.
Interconnects (Integrated circuit technology)