rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Chemical-mechanical polishing of low dielectric constant polymers and organosilicate glasses
    sub title: fundamental mechanisms and application to IC interconnect technology
  name:
    name part: Borst, Christopher L. (Christopher Lyle)
    role:
      role term: creator
  name:
    name part: Gill, William N.
  name:
    name part: Gutmann, Ronald J.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: mau
    date issued: 2002
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xiv, 229 pages) : illustrations.
  abstract: As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
  table of contents: Ch. 1. Overview of IC Interconnects. 1.1. Silicon IC Beol Technology Trends. 1.2. SIA Roadmap Interconnect Projections. 1.3. Low-[kappa] Requirements and Materials. 1.4. Need for Low-[kappa] CMP Process Understanding -- Ch. 2. Low-[kappa] Interlevel Dielectrics. 2.1. Fluorinated Glasses. 2.2. Silsesquioxanes. 2.3. Organosilicate Glasses. 2.4. Polymers. 2.5. Fluorinated Hydrocarbons. 2.6. Nanoporous Silica Films. 2.7. Other Porous Materials -- Ch. 3. Chemical-Mechanical Planarization (CMP). 3.1. CMP Process Description. 3.2. CMP Processes with Copper Metallization. 3.3. CMP of Low-[kappa] Materials. 3.4. CMP Process Models. 3.5. Langmuir-Hinshel Wood Surface Kinetics in CMP Modeling -- Ch. 4. CMP of BCB and SiLK Polymers.
  note: by Christopher L. Borst, William N. Gill, Ronald J. Gutmann.
  note: Includes bibliographical references and index.
  subject:
    topic: Interconnects (Integrated circuit technology)
  subject:
    topic: Semiconductors
    topic: Polishing
  subject:
    topic: Grinding and polishing
  subject:
    topic: Chemical mechanical planarization
  classification: TK7874.53 .B67 2002eb
  classification: 621.3815/2
  related item:
    title info:
      title: Chemical-mechanical polishing of low dielectric constant polymers and organosilicate glasses
    name:
      name part: Borst, Christopher L. (Christopher Lyle).
    identifier: (DLC) 2002028782
    identifier: (OCoLC)50243109
  identifier: 9781461511656 (electronic bk.)
  identifier: 1461511658 (electronic bk.)
  identifier: 1402071930
  identifier: 9781402071935
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: GW5XE
    record creation date: 140711
    record change date: 20260422155857.5
    record identifier: in00003555322
    language of cataloging:
      language term: eng